byd33dgp thru byd33mgp document number 88914 31-aug-05 vishay general semiconductor www.vishay.com 1 p a t e n t e d * do-204al (do-41) ? * glass-plastic encapsulation technique is covered by patent no. 3,996,602, brazed-lead assembly by patent no. 3,930,306 new product avalanche glass passivated junction fast switching rectifier major ratings and characteristics i f(av) 1.0 a v rrm 200 v to 1000 v i fsm 30 a e rsm 10 mj, 7 mj t rr 150 ns, 250 ns, 300 ns i r 5.0 a t j max. 175 c features cavity-free glass-passivated junction avalanche surge capability guaranteed fast reverse recovery time low switching losse s, high efficiency low leakage current, typical i r less than 0.1 a high forward surge capability meets environmental standard mil-s-19500 solder dip 260 c, 40 seconds typical applications for use in high frequency rectification of switching power supplies, inverters, converters and freewheel ing applications for consumer, automotive and tele- communication mechanical data case: do-204al, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings t a = 25 c unless otherwise specified parameter symbol byd33dgp byd33ggp byd33jgp byd33kgp byd33mgp unit device marking code 33dgp 33ggp 33jgp 33kgp 33mgp v maximum repetitive peak reverse voltage v rrm 200 400 600 800 1000 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average forward rectified current 0.375 " (9.5 mm) lead length at t a = 55 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a non-repetitive peak reverse avalanche energy d-j k-m e rsm 10 7 mj maximum full load revers e current, full cycle average 0.375" (9.5 mm) lead length t a = 55 c i r(av) 100 a operating junction and storage temperature range t j ,t stg - 65 to + 175 c
www.vishay.com 2 document number 88914 31-aug-05 byd33dgp thru byd33mgp vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified notes: (1) pulse test: 300 s pulse width, 1 % duty cycle thermal characteristics t a = 25 c unless otherwise specified notes: (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, p.c.b. mounted ratings and characteristics curves (t a = 25 c unless otherwise specified) parameter test condition symbol byd33dgp byd33ggp byd33jgp byd33kgp byd33mgp unit maximum instantaneous forward voltage at 1.0 a (1) v f 1.3 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 150 c i r 5.0 200 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 150 250 300 ns typical junction capacitance at 4.0 v, 1 mhz c j 15 pf parameter symbol byd33dgp byd33ggp byd33jgp byd33kgp byd33mgp unit typical thermal resistance (1) r ja 55 c/w figure 1. forward current derating curve am b ient temperat u re ( c) a v erage for w ard rectified c u rrent (a) 25 50 75 100 125 150 175 0 0.25 0.5 0.75 1.0 resisti v e or ind u cti v e load 0.375" (9.5m m) lead length figure 2. maximum non-repetitive peak forward surge current nu m b er of cycles at 60 hz for w ard s u rge c u rrent (a) 1 10 100 0 10 20 30 t j = t j max. 8 .3 ms single half sine- w a v e
byd33dgp thru byd33mgp document number 88914 31-aug-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics instantaneo u sfor w ard v oltage ( v ) instantaneo u sfor w ard c u rrent (a) 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle percent of rated peak re v erse v oltage ( % ) instantaneo u sre v erse c u rrent ( a) 0 20 40 60 8 0 100 0.01 0.1 1 10 20 t j = 125 c t j = 25 c t j = 75 c figure 5. typical junction capacitance figure 6. typical trans ient thermal impedance re v erse v oltage ( v ) j u nction capacitance (pf) 1 10 100 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50m v p-p t, p u lse d u ration (sec.) transient thermal impedance ( c w ) 0.01 0.1 1 10 100 0.1 1 10 100 0.107 (2.7) 0.080 (2.0) 0.034 (0.86) 0.028 (0.71) dia. 1.0 (25.4) min. 1.0 (25.4) min. 0.205 (5.2) 0.160 (4.1) dia. do-204al (do-41)
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